Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction
Identifieur interne : 00FB77 ( Main/Repository ); précédent : 00FB76; suivant : 00FB78Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction
Auteurs : RBID : Pascal:01-0469168Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
We have designed and implemented a vertical cavity violet light emitting diode which features an optical resonator composed of an in situ grown GaN/AlGaN DBR and a high reflectivity dielectric mirror. The active InGaN MQW medium is grown directly atop the AlGaN DBR and the structure includes an intracavity lateral current spreading layer based on a p++/n++ InGaN/GaN tunnel junction. Electroluminescence shows directional emission, with modal linewidths as narrow as 0.6 nm. © 2001 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 010437
Links to Exploration step
Pascal:01-0469168Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction</title>
<author><name sortKey="Diagne, M" uniqKey="Diagne M">M. Diagne</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Rhode Island</region>
</placeName>
<wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea>
</affiliation>
<affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Agilent Technologies Laboratories, Palo Alto, California 94304</s1>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Californie</region>
</placeName>
<wicri:cityArea>Agilent Technologies Laboratories, Palo Alto</wicri:cityArea>
</affiliation>
<affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Lumileds Lighting, San Jose, California 95131</s1>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Californie</region>
</placeName>
<wicri:cityArea>Lumileds Lighting, San Jose</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="He, Y" uniqKey="He Y">Y. He</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Rhode Island</region>
</placeName>
<wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Zhou, H" uniqKey="Zhou H">H. Zhou</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Rhode Island</region>
</placeName>
<wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Makarona, E" uniqKey="Makarona E">E. Makarona</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Rhode Island</region>
</placeName>
<wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Nurmikko, A V" uniqKey="Nurmikko A">A. V. Nurmikko</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Rhode Island</region>
</placeName>
<wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Han, J" uniqKey="Han J">J. Han</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87111</s1>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Nouveau-Mexique</region>
</placeName>
<wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Waldrip, K E" uniqKey="Waldrip K">K. E. Waldrip</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87111</s1>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Nouveau-Mexique</region>
</placeName>
<wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Figiel, J J" uniqKey="Figiel J">J. J. Figiel</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87111</s1>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Nouveau-Mexique</region>
</placeName>
<wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Takeuchi, T" uniqKey="Takeuchi T">T. Takeuchi</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Rhode Island</region>
</placeName>
<wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Krames, M" uniqKey="Krames M">M. Krames</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Rhode Island</region>
</placeName>
<wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">01-0469168</idno>
<date when="2001-11-26">2001-11-26</date>
<idno type="stanalyst">PASCAL 01-0469168 AIP</idno>
<idno type="RBID">Pascal:01-0469168</idno>
<idno type="wicri:Area/Main/Corpus">010437</idno>
<idno type="wicri:Area/Main/Repository">00FB77</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0003-6951</idno>
<title level="j" type="abbreviated">Appl. phys. lett.</title>
<title level="j" type="main">Applied physics letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term>
<term>Electroluminescence</term>
<term>Experimental study</term>
<term>Gallium compounds</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Light emitting diodes</term>
<term>Mirrors</term>
<term>Optical resonators</term>
<term>Semiconductor quantum wells</term>
<term>Wide band gap semiconductors</term>
<term>quantum well devices</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>8560J</term>
<term>4279B</term>
<term>8535B</term>
<term>7860F</term>
<term>7867D</term>
<term>Etude expérimentale</term>
<term>Aluminium composé</term>
<term>Gallium composé</term>
<term>Indium composé</term>
<term>Diode électroluminescente</term>
<term>Miroir</term>
<term>Résonateur optique</term>
<term>Semiconducteur III-V</term>
<term>Semiconducteur bande interdite large</term>
<term>Puits quantique semiconducteur</term>
<term>Electroluminescence</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We have designed and implemented a vertical cavity violet light emitting diode which features an optical resonator composed of an in situ grown GaN/AlGaN DBR and a high reflectivity dielectric mirror. The active InGaN MQW medium is grown directly atop the AlGaN DBR and the structure includes an intracavity lateral current spreading layer based on a p<sup>++</sup>
/n<sup>++</sup>
InGaN/GaN tunnel junction. Electroluminescence shows directional emission, with modal linewidths as narrow as 0.6 nm. © 2001 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0>
</fA01>
<fA02 i1="01"><s0>APPLAB</s0>
</fA02>
<fA03 i2="1"><s0>Appl. phys. lett.</s0>
</fA03>
<fA05><s2>79</s2>
</fA05>
<fA06><s2>22</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>DIAGNE (M.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>HE (Y.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>ZHOU (H.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>MAKARONA (E.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>NURMIKKO (A. V.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>HAN (J.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>WALDRIP (K. E.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>FIGIEL (J. J.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>TAKEUCHI (T.)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>KRAMES (M.)</s1>
</fA11>
<fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87111</s1>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Agilent Technologies Laboratories, Palo Alto, California 94304</s1>
</fA14>
<fA14 i1="04"><s1>Lumileds Lighting, San Jose, California 95131</s1>
</fA14>
<fA20><s1>3720-3722</s1>
</fA20>
<fA21><s1>2001-11-26</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>10020</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2001 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>01-0469168</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied physics letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We have designed and implemented a vertical cavity violet light emitting diode which features an optical resonator composed of an in situ grown GaN/AlGaN DBR and a high reflectivity dielectric mirror. The active InGaN MQW medium is grown directly atop the AlGaN DBR and the structure includes an intracavity lateral current spreading layer based on a p<sup>++</sup>
/n<sup>++</sup>
InGaN/GaN tunnel junction. Electroluminescence shows directional emission, with modal linewidths as narrow as 0.6 nm. © 2001 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F15</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B79B</s0>
</fC02>
<fC02 i1="03" i2="X"><s0>001D03F01</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B70H60F</s0>
</fC02>
<fC02 i1="05" i2="3"><s0>001B70H66</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>8560J</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>4279B</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>8535B</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>7860F</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>7867D</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Aluminium composé</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Aluminium compounds</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Gallium composé</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Gallium compounds</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Diode électroluminescente</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Light emitting diodes</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Miroir</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Mirrors</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Résonateur optique</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Optical resonators</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>quantum well devices</s0>
<s4>INC</s4>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Electroluminescence</s0>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Electroluminescence</s0>
</fC03>
<fN21><s1>330</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0147M000144</s0>
</fN47>
</pA>
</standard>
</inist>
</record>
Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00FB77 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00FB77 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien |wiki= *** parameter Area/wikiCode missing *** |area= IndiumV3 |flux= Main |étape= Repository |type= RBID |clé= Pascal:01-0469168 |texte= Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction }}
This area was generated with Dilib version V0.5.77. |